PART |
Description |
Maker |
AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
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MITEQ INC
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2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
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UTC ROHM[Rohm]
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2SA1893 E000575 |
TRANSISTOR (STOROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管(STOROBE闪光,中等功率放大器应用 STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system
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Toshiba, Corp. Toshiba Corporation
|
UPC2710TB1 UPC2710TB-E3 |
5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
NEC
|
2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
AH101 AH101-PCB |
JT 41C 41#20 SKT RECP 中功率,高线性放大器 Circular Connector; No. of Contacts:79; Series:MS27472; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No Medium Power/ High Linearity Amplifier Medium Power, High Linearity Amplifier
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List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. ETC[ETC] WJ Communications
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CMM1434-SM-0G0T CMM1434-SM07 |
13.50-14.50 GHz 2.5-Watt Power Amplifier 13500 MHz - 14500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 13.50-14.50 GHz 2.5-Watt Power Amplifier 13.50-14.50吉赫2.5瓦功率放大器
|
Mimix Broadband, Inc.
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ATR7032-PVPW ATR7032-PVQW ATR7032-DEV-BOARD |
High Gain Power Amplifier for 802.11bg WLAN Systems 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Atmel Corp. Atmel, Corp.
|
TGC4704-FC |
38 to 77 GHz Doubler and Medium Power Amplifier 76000 MHz - 77000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
|
SST11LP1210 SST11LP12-QCF SST11LP12-10 |
4.9-5.8 GHz High-Linearity Power Amplifier 4900 MHz - 5800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
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Silicon Storage Technology, Inc Microchip Technology Inc. Silicon Storage Technol...
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